Research & Production Group
Manufacturing of UV curing polymers
Russia, Nizhny Novgorod
Lenin Av., 88/4
ikonka mail Е-mail: service_nn@bk.ru
ikonka telefon Тел.: +7(831) 414-38-34

The dry film photoresist

The dry film photoresist

Intended for use in the electronic industry, in particular, for the formation of conductive layers on printed circuit boards negative and positive technologies, to implement photolithographic processes followed by chemical etching and galvanic deposition of metals in the manufacture of integrated circuits, electroharmonix Sith.

Is the method of watering based on the pet with the subsequent lamination of a polyethylene film. Comes in rolls of a width of 300 mm long by 70 m.

The photoresist is Spectrum-PF, while retaining all the advantages of the known analogues, has a number of advantages that will allow you to obtain a vertical profile of the existence of almost any thickness of layers with a high resolution that is not dependent on the power of the UV source (the possibility of pattern formation with the size of 40 µm using UV lamps with a capacity > 250 watts).

The use of dry film photoresist will allow you to achieve high process stability process.



Indicator name The value
The thickness of the photosensitive layer, μm 25, 30, 40, 45, 50
The thickness of the base, µm 20
The thickness of the plastic film, µm 40
The effective exposure time from the source DRTG -3000 in the field of 320-420 nm, seconds 60 - 120
Resolution, µm 60 - 80
The resistance layer exposed in solutions with pH up to 10 at T=18-28°C, min. 1 and more

The photoresist stands during the galvanic deposition of metals from the electrolyte with a pH of less than 7.

Recommendations for use:

The application of the photoresist is carried out on standard equipment laminating of various types, in accordance with the instructions for their use.

The exposure is conducted at facilities with a UV light source of any power. After exposure, the workplace can be kept for up to 30 minutes without compromising the quality of existence.

The manifestation is held in a 1-2% solution of soda ash at a temperature of 18-28°C, then rinsed with cold water, drying with compressed air and additional drying in an oven at a temperature of 70-80°C for 15-20 min.

The removal is performed in 5-20% aqueous solution of potassium hydroxide, sodium hydroxide or 3-5% aqueous solution of ammonia.




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